Liquid crystal display and method of manufacturing the same

ABSTRACT

A liquid crystal display includes: a substrate; a thin film transistor; a pixel electrode; a roof layer; a liquid crystal layer; and a plurality of partitions. The thin film transistor is disposed on the substrate. The pixel electrode is connected to the thin film transistor. The roof layer is disposed to face the pixel electrode. The liquid crystal layer is formed by a plurality of microcavities between the pixel electrode and the roof layer, wherein the microcavities include a liquid crystal material. The partitions are between the microcavities adjacent to each other, wherein the partitions may include an organic material and are arranged side by side to one another.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2014-0018048 filed on Feb. 17, 2014, Korean PatentApplication No. 10-2014-0057674 filed on May 14, 2014, and Korean PatentApplication No. 10-2014-0187158 filed on Dec. 23, 2014 in the KoreanIntellectual Property Office, the entire contents of which areincorporated herein by reference.

BACKGROUND

(a) Field

The present application relates to a liquid crystal display and amanufacturing method thereof.

(b) Description of the Related Art

A liquid crystal display panel, which is one of the more common types offlat panel displays currently in use, includes two sheets of substrateswith field generating electrodes such as a pixel electrode and a commonelectrode, and a liquid crystal layer interposed therebetween.

The liquid crystal display generates electric fields in the liquidcrystal layer by applying voltages to the field generating electrodes,determines the alignment of liquid crystal molecules of the liquidcrystal layer by the generated electric field, and controls polarizationof incident light, thereby displaying images.

A technique of forming a cavity in a pixel and filling the cavity withliquid crystal molecules to implement a display has been developed forone of the liquid crystal displays. Although two sheets of substratesare used in a conventional liquid crystal display, this technique formsconstituent elements on one substrate, thereby reducing weight,thickness, and the like of the device.

In the display device including a plurality of microcavities, a rooflayer to maintain the microcavities is formed. The roof layer may becontinuously connected between adjacent microcavities. The roof layermay be formed of a composite layer of an inorganic layer and an organiclayer.

Like this, when the roof layer is formed of the composite layer of theinorganic layer and the organic layer, a process time is increased dueto an increase of a number of masks. Also, since it is necessary toincrease an alignment margin by considering a misalignment between theorganic layer and the inorganic layer, the aperture ratio may bedeteriorated.

The above information disclosed in this Background section is only forenhancement of understanding of the background and therefore it maycontain information that does not form the prior art that is alreadyknown in this country to a person of ordinary skill in the art.

SUMMARY

Embodiments provide a liquid crystal display in which a process time isreduced and an aperture ratio is improved, and a manufacturing methodthereof.

A liquid crystal display according to an exemplary embodiment includes:a substrate; a thin film transistor; a pixel electrode; a roof layer; aliquid crystal layer; and a plurality of partitions. The thin filmtransistor is disposed on the substrate. The pixel electrode isconnected to the thin film transistor. The roof layer is disposed toface the pixel electrode. The liquid crystal layer is formed by aplurality of microcavities between the pixel electrode and the rooflayer, wherein the microcavities include a liquid crystal material. Thepartitions are between the microcavities adjacent to each other, whereinthe partitions may include an organic material and are arranged side byside to one another.

The roof layer may be disposed on the partitions.

An insulating layer disposed under the roof layer may be furtherincluded, and the partitions may be disposed between the insulatinglayer and the roof layer.

The roof layer and the insulating layer may include an inorganicmaterial.

The roof layer may contact the insulating layer in a regioncorresponding to the microcavities.

A capping layer disposed on a liquid crystal injection portion may befurther included, and the liquid crystal injection portion may be formedbetween the microcavities.

A common electrode disposed under the insulating layer and facing thepixel electrode with respect to the microcavities may be furtherincluded, and a lateral wall of the common electrode and a lateral wallof the insulating layer may be aligned at the liquid crystal injectionportion.

A data line connected to the thin film transistor may be furtherincluded, and the partitions may extend in a direction parallel to thedata line.

The partitions may be disconnected according to the direction of thedata line.

A gate line disposed on the substrate and crossing the data line may befurther included, and the partitions may not cross the gate line.

The partitions may have a bar shape.

A manufacturing method of a liquid crystal display according to anexemplary embodiment includes the following. A thin film transistor isformed on a substrate. A pixel electrode connected to the thin filmtransistor is formed. A sacrificial layer is formed on the pixelelectrode. An insulating layer is formed on the sacrificial layer. Anorganic layer is formed on the insulating layer, and the insulatinglayer is patterned by using the organic layer as a mask. The sacrificiallayer is removed to form a plurality of microcavities. The organic layeris patterned. A liquid crystal material is injected to themicrocavities, wherein the patterning of the organic layer includesremoving the organic layer disposed at a portion corresponding to eachof the microcavities and forming a plurality of partitions between themicrocavities adjacent to each other.

The partitions may include organic material and are arranged side byside to one another.

The forming of the sacrificial layer may include forming an opening at aportion overlapping a data line connected to the thin film transistor.

The insulating layer may be formed in the opening.

The partitions may be formed along a direction that the opening extends.

The method may further include forming a roof layer on the insulatinglayer after patterning the organic layer.

The partitions may be formed between the roof layer and the insulatinglayer.

The roof layer and the insulating layer may include an inorganicmaterial.

The roof layer may contact the insulating layer in a regioncorresponding to the microcavities.

The method may further include forming a capping layer in a liquidcrystal injection portion, and the liquid crystal injection portion maybe formed between the microcavities.

The method may further include forming a common electrode under theinsulating layer and facing the pixel electrode with respect to themicrocavities, and the common electrode may be patterned by using theorganic layer as a mask.

According to an exemplary embodiment, an additional inorganic insulatinglayer may be omitted on the roof layer including the organic materialsuch that a number of masks may be reduced.

Also, transmittance and an aperture ratio may be improved by simplifyinga structure of the roof layer.

Further, in the manufacturing process, the organic layer is coated onthe inorganic insulating layer such that damage to the inorganic layermay be prevented.

According to the exemplary embodiments, a process can be simplified byforming a roof layer only with one or more inorganic layers. Inaddition, when the roof layer is formed with inorganic layers, eachhaving a different stress, the roof layer is prevented from being liftedaround an entrance portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view of a liquid crystal display according to anexemplary embodiment.

FIG. 2 is a cross-sectional view taken along a line II-II of FIG. 1.

FIG. 3 is a cross-sectional view taken along a line III-III of FIG. 1.

FIG. 4 is a top plan view of a liquid crystal display according to anexemplary embodiment.

FIG. 5 is a cross-sectional view taken along a line V-V of FIG. 4.

FIG. 6 is a cross-sectional view taken along a line V-V of FIG. 4 inaccordance with another embodiment.

FIG. 7 is a cross-sectional view taken along a line VI-VI of FIG. 4.

FIG. 8 is a schematic top plan view of a region where a partition isformed in the exemplary embodiment of FIG. 1 to FIG. 3.

FIGS. 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21 arecross-sectional views showing a manufacturing method of a liquid crystaldisplay according to an exemplary embodiment.

FIGS. 22, 23, 24 are cross-sectional views showing a manufacturingmethod of a liquid crystal display according to an exemplary embodiment.

FIG. 25 is a top plan view of a liquid crystal display according to anexemplary embodiment.

FIG. 26 is a cross-sectional view of the liquid crystal display of FIG.25, taken along the line XXVI-XXVI.

FIG. 27 is a cross-sectional view of the liquid crystal display of FIG.25, taken along the line XXVII-XXVII.

FIG. 28 is a schematic cross-sectional view of a roof layer according toan exemplary embodiment.

FIG. 29 is a schematic cross-sectional view illustrating the roof layeraccording to an exemplary embodiment.

FIG. 30 shows the degree of lift of a roof layer around an entranceregion according to a thickness variation according to exemplaryembodiments.

FIG. 31 and FIG. 32 are cross-sectional views of an exemplary variationof the exemplary embodiment of FIG. 26.

FIGS. 33, 34, 35, 36, 37, 38, 39, 40, 41 are cross-sectional views of amethod for manufacturing a liquid crystal display according to anexemplary embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments will be described in detail with reference to theattached drawings. The embodiments may be modified in many differentforms and should not be construed as being limited to the exemplaryembodiments set forth herein. Rather, the exemplary embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the concept of the inventive concept to those skilled inthe art.

In the drawings, the thickness of layers and regions may be exaggeratedfor clarity. In addition, when a layer is described to be formed onanother layer or on a substrate, this means that the layer may be formedon the other layer or on the substrate, or a third layer may beinterposed between the layer and the other layer or the substrate. Likenumbers refer to like elements throughout the specification.

FIG. 1 is a top plan view of a liquid crystal display according to anexemplary embodiment. FIG. 2 is a cross-sectional view taken along aline II-II of FIG. 1. FIG. 3 is a cross-sectional view taken along aline III-III of FIG. 1.

FIG. 1 shows a 2*2 pixel portion as a center portion of a plurality ofpixels, and these pixels may be repeatedly arranged up/down andright/left in the liquid crystal display according to an exemplaryembodiment.

Referring to FIG. 1 to FIG. 3, a gate line 121 and a storage electrodeline 131 are formed on a substrate 110 made of transparent glass orplastic. The gate line 121 includes a gate electrode 124. The storageelectrode line 131 is mainly extended in a horizontal direction, andtransfers a predetermined voltage such as a common voltage Vcom. Thestorage electrode line 131 includes a pair of vertical storage electrodeportions 135 a substantially extended to be perpendicular to the gateline 121, and a horizontal storage electrode portion 135 a connectingends of the pair of vertical storage electrode portions 135 a to eachother. The storage electrode portions 135 a and 135 b have a structuresurrounding a pixel electrode 191.

A gate insulating layer 140 is formed on the gate line 121 and thestorage electrode line 131. A linear semiconductor layer 151 disposedunder a data line 171 and a semiconductor layer 154 under source/drainelectrodes 173, 175 and corresponding to a channel region of a thin filmtransistor Q are formed on the gate insulating layer 140. The linearsemiconductor layer 151 and the semiconductor layer 154 under thesource/drain electrodes 173, 175 and corresponding to the channel regionof the thin film transistor Q may be connected to each other.

A plurality of ohmic contacts may be formed between the linearsemiconductor layer 151 and the data line 171, and between thesemiconductor layer 154 under the source/drain electrode andcorresponding to the channel region and the source/drain electrode, andare omitted in the drawings.

Data conductors 171, 173, and 175 including the source electrode 173,the data line 171 connected to the source electrode 173, and the drainelectrode 175 are formed on the semiconductor layers 151 and 154 and thegate insulating layer 140.

The gate electrode 124, the source electrode 173, and the drainelectrode 175 form the thin film transistor Q along with thesemiconductor layer 154, and the channel of the thin film transistor Qis formed in the exposed portion of the semiconductor layer 154 betweenthe source electrode 173 and the drain electrode 175.

A first interlayer insulating layer 180 a is formed on the dataconductors 171, 173, and 175 and the exposed semiconductor layer 154.The first interlayer insulating layer 180 a may include an inorganicinsulator such as a silicon nitride (SiNx) and a silicon oxide (SiOx),or an organic insulator.

A color filter 230 and a light blocking member 220 are formed on thefirst interlayer insulating layer 180 a.

The light blocking member 220 has a lattice structure having an openingcorresponding to a region displaying an image, and is formed of amaterial that prevents light from being transmitted therethrough. Thecolor filter 230 is formed at the opening of the light blocking member220. The light blocking member 220 includes a horizontal light blockingmember 220 a formed in a direction parallel to the gate line 121, and avertical light blocking member 220 b formed in a direction parallel tothe data line 171.

The color filter 230 may display one of primary colors, such as threeprimary colors including red, green, and blue. However, the colors arenot limited to the three primary colors including red, green, and blue,and the color filter 230 may also display one among a cyan-based color,a magenta-based color, a yellow-based color, and a white-based color.The color filter 230 may be formed of materials displaying differentcolors for each adjacent pixel.

A second interlayer insulating layer 180 b covering the color filter 230and the light blocking member 220 is formed on the color filter 230 andthe light blocking member 220. The second interlayer insulating layer180 b may include the inorganic insulating material such as a siliconnitride (SiNx) and a silicon oxide (SiOx), or the organic insulatingmaterial. Unlike the cross-sectional view of FIG. 2, in a case where astep is generated due to a difference in thickness between the colorfilter 230 and the light blocking member 220, the second interlayerinsulating layer 180 b includes an organic insulating material, so thatit is possible to decrease or remove the step.

The color filter 230, the light blocking member 220, and the interlayerinsulating layers 180 a and 180 b have a contact hole 185 extending toand exposing the drain electrode 175.

The pixel electrode 191 is formed on the second interlayer insulatinglayer 180 b. The pixel electrode 191 may be made of a transparentconductive material such as ITO or IZO.

An overall shape of the pixel electrode 191 is a quadrangle, and thepixel electrode 191 includes cross stems configured by a horizontal stem191 a and a vertical stem 191 b crossing the horizontal stem 191 a.Further, the pixel electrode 191 is divided into four sub-regions by thehorizontal stem 191 a and the vertical stem 191 b, and each sub-regionincludes a plurality of minute branches 191 c. In the present exemplaryembodiment, the pixel electrode 191 may further include an outer stemportion 191 d surrounding an outer circumference of the pixel electrode191. The outer stem portion 191 d may connect the minute branches 191 cfrom right and left outer edges. In the present exemplary embodiment,the outer stem portion 191 d is disposed in the right and left outeredges of the pixel electrode 191, but it may extend to an upper or lowerportion of the pixel electrode 191.

The minute branches 191 c of the pixel electrode 191 form an angle ofapproximately 40° to 45° with the gate line 121 or the horizontal stem191 a. Further, the minute branches 191 c of two adjacent sub-regionsmay be perpendicular to each other. Furthermore, a width of each minutebranch 191 c may be gradually increased, or a distance between theminute branches 191 c may be varied.

The pixel electrode 191 includes an extension 197 which is connected ata lower end of the vertical stem 191 b and has a larger area than thevertical stem 191 b. The extension 197 of the pixel electrode 191 isphysically and electrically connected to the drain electrode 175 throughthe contact hole 185, thereby receiving a data voltage from the drainelectrode 175.

The thin film transistor Q and the pixel electrode 191 described aboveare just described as examples, and a structure of the thin filmtransistor and a design of the pixel electrode may be modified in orderto improve side visibility.

A lower alignment layer 11 is formed on the pixel electrode 191, and maybe a vertical alignment layer. The lower alignment layer 11, as a liquidcrystal alignment layer made of a material such as polyamic acid,polysiloxane, polyimide, or the like, may include at least one ofgenerally used materials. Also, the lower alignment layer 11 may be aphotoalignment layer.

An upper alignment layer 21 is provided at a portion facing the loweralignment layer 11, and a microcavity 305 is formed between the loweralignment layer 11 and the upper alignment layer 21. A liquid crystalmaterial including liquid crystal molecules 310 is injected into themicrocavity 305 through an entrance region 307. In the present exemplaryembodiment, the alignment material forming the alignment layers 11 and21 and the liquid crystal material including the liquid crystalmolecules 310 may be injected into the microcavity 305 by usingcapillary force.

The microcavities 305 are divided in the vertical direction by aplurality of liquid crystal injection portions 307FP disposed at aportion overlapping the gate line 121, thereby forming the plurality ofmicrocavities 305. The plurality of microcavities 305 may be formedalong a column direction of the pixel electrode 191, that is, in thevertical direction. Also, the microcavities 305 are divided in thehorizontal direction by partitions 360 w that will be described later,thereby forming the plurality of microcavities 305. The plurality ofmicrocavities 305 may be formed along the row direction of the pixelelectrode 191, in other words, the horizontal direction in which thegate line 121 extends. The plurality of formed microcavities 305 mayrespectively correspond to the pixel area, and the pixel areas maycorrespond to a region displaying the image.

The liquid crystal injection portion 307FP may be elongated according tothe extending direction of the gate line 121. The liquid crystalinjection portion 307FP may horizontally divide the microcavities 305,and may be an empty space where a common electrode 270 and an insulatinglayer 350 are removed. The liquid crystal injection portion 307FP may becovered by a capping layer 390 after injecting a liquid crystal materialincluding the alignment layers 11 and 21 and the liquid crystalmolecules 310 into the microcavities 305.

The liquid crystal injection portion 307FP may be a path where thealignment material or the liquid crystal material are filled in and thealignment material or the liquid crystal material are injected into themicrocavity 305 through the entrance region 307.

The common electrode 270 and the insulating layer 350 are disposed onthe upper alignment layer 21. The common electrode 270 receives thecommon voltage, and generates an electric field together with the pixelelectrode 191 to which the data voltage is applied to determine adirection in which the liquid crystal molecules 310 disposed at themicrocavity 305 between the two electrodes 191, 270 are inclined. Thecommon electrode 270 may be made of the transparent conductive materialsuch as ITO or IZO. The common electrode 270 forms a capacitor with thepixel electrode 191 to maintain the received voltage even after the thinfilm transistor Q is turned off. The insulating layer 350 may be theinorganic insulating layer formed of the inorganic material such as asilicon nitride (SiNx) or a silicon oxide (SiO_(x)). Although not shown,the insulating layer 350 may be formed by depositing two more inorganiclayers.

In the present exemplary embodiment, the insulating layer 350 may have afunction of the roof layer of the microcavity 305 so as to not change ashape thereof. The insulating layer 350 as the roof layer may have afunction of supporting the structure of the microcavity 305 such thatthe microcavity 305 that is the space between the pixel electrode 191and the common electrode 270 may maintain the shape thereof. To supportthe structure of the microcavity 305, in the present exemplaryembodiment, the insulating layer 350 may be formed with a thickness ofmore than about 4000 angstroms, and preferably, more than 4000 angstromsto less than 10,000 angstroms.

In the present exemplary embodiment, the insulating layer 350 may bedisposed on the whole area of the substrate 110 except for the portionof the insulating layer 350 that is removed in the liquid crystalinjection portion 307FP.

In the present exemplary embodiment, sides of the common electrode 270and the insulating layer 350 may be respectively exposed in the liquidcrystal injection portion 307FP, and the side surfaces are disposed tobe engaged with each other. In other words, the lateral wall of thecommon electrode 270 and the lateral wall of the insulating layer 350are aligned.

In the present exemplary embodiment, it is described that the commonelectrode 270 is formed on the microcavity 305, but in another exemplaryembodiment, the common electrode 270 is formed under the microcavity305, so that liquid crystal driving according to a coplanar electrode(CE) mode is possible.

Referring to FIG. 2, the capping layer 390 is formed on the insulatinglayer 350. The capping layer 390 includes the organic material or theinorganic material. In detail, the capping layer 390 may be formed of athermal hardening resin, silicon oxycarhide (SiOC), or graphene. In thepresent exemplary embodiment, the capping layer 390 may contact theupper surface of the insulating layer 350. The capping layer 390 may bedisposed at the liquid crystal injection portion 307FP as well as at theinsulating layer 350. At this time, the entrance region 307 of themicrocavity 305 exposed by the liquid crystal injection portion 307FPmay be covered by the capping layer 390. In the present exemplaryembodiment, the liquid crystal material is removed in the liquid crystalinjection portion 307FP. But, in a modified exemplary embodiment, theliquid crystal material may remain at the liquid crystal injectionportion 307FP after being injected to the microcavity 305.

In the present exemplary embodiment, the partition 360 w is formedbetween the microcavities 305 adjacent in the horizontal direction, asshown in FIG. 3. The partition 360 w may extend according to thedirection parallel to the data line 171 and may be covered by thecapping layer 390. In the present exemplary embodiment, the uppersurface of the partition 360 w may contact the capping layer 390. Thepartition 360 w may include a photoresist or other organic materials.The partition 360 w can partition or define the microcavities 305according to the horizontal direction. In the present exemplaryembodiment, the partition 360 w is formed between the microcavities 305such that generated stress is reduced even if the substrate 110 is bent,and a change degree of a cell gap may be remarkably reduced.

FIG. 4 is a top plan view of a liquid crystal display according to anexemplary embodiment. FIG. 5 is a cross-sectional view taken along aline V-V of FIG. 4. FIG. 6 is a cross-sectional view taken along a lineV-V of FIG. 4 in accordance with another embodiment. FIG. 7 is across-sectional view taken along a line VI-VI of FIG. 4.

The roof layer structure of embodiment shown in FIG. 1, FIG. 2, and FIG.3 may be modified in embodiment shown in FIG. 4, FIG. 5, and FIG. 7.

Referring to FIG. 4, FIG. 5, FIG. 7, an insulating layer 350 is disposedon the common electrode 270, and a roof layer 370 is disposed on thepartition 360 w. The insulating layer 350 may be formed with a thinnerthickness than the roof layer 370, and a thickness of more than about4,000 angstroms, and preferably, more than 4,000 angstroms to less than10,000 angstroms. The roof layer 370 may contact the insulating layer350 in a portion corresponding to the microcavity 305. Referring to FIG.5, the roof layer 370 is patterned to have a removed shape in the liquidcrystal injection portion 307FP. Here, the liquid crystal injectionportion 307FP may be covered by the capping layer 390.

Beside the differences described above, all contents of embodiment inFIG. 1, FIG. 2, and FIG. 3 may be applied in embodiment of FIG. 4, FIG.5, and FIG. 7.

FIG. 6 shows a modified embodiment of FIG. 5. Referring to FIG. 6, theroof layer 370 may cover the liquid crystal injection portion 307FP. Thecapping layer 390 is disposed on the roof layer 370.

Beside the differences described above, all contents of embodiment inFIG. 4, FIG. 5, and FIG. 7 may be applied in embodiment of FIG. 6.

Next, a region where the partition 360 w is formed will be describedwith reference to FIG. 8. FIG. 8 is a schematic top plan view of aregion where a partition is formed in the exemplary embodiment of FIG. 1to FIG. 3. FIG. 8 schematically shows a portion corresponding to the topplan view of FIG. 1.

Referring to FIG. 8, a first region EM corresponding to the plane regionof the microcavity 305 corresponding to the pixel electrode 191 and asecond region A where the partition 360 w is formed between the firstregions EM are disposed. The partitions 360 w are arranged side by sideto one another. Referring to FIG. 1 and FIG. 8, the second region A hasa bar shape while overlapping the data line 171 and is disconnected atthe liquid crystal injection portion 307FP. In other words, thepartition 360 w may be disconnectedly formed according to the directionof the data line 171. The liquid crystal injection portion 307FP is aspace that is elongated according to the extending direction of the gateline 121 while overlapping the gate line 121 such that the partition 360w may not exist at a portion where the gate line 121 and the data line171 are crossed. The partition 360 w may not cross the gate line 121.Alternatively, the partition 360 w may be connectedly formed accordingto the direction of the data line 171.

Next, an exemplary embodiment of a method manufacturing the describedliquid crystal display will be described with reference to FIG. 9 toFIG. 21. An exemplary embodiment to be described below is an exemplaryembodiment of the manufacturing method and may be modified in anotherform.

FIG. 9 to FIG. 21 are cross-sectional views showing a manufacturingmethod of a liquid crystal display according to an exemplary embodiment.FIG. 9, FIG. 11, FIG. 13, FIG. 14, FIG. 16, FIG. 18, and FIG. 20sequentially show the cross-sectional views taken along the line II-IIof FIG. 1. FIG. 10, FIG. 12, FIG. 15, FIG. 17, FIG. 19, and FIG. 21 showthe cross-sectional views taken along the line III-III of FIG. 1.

Referring to FIG. 1, FIG. 9, and FIG. 10, to form a generally knownswitching element on a substrate 110, a gate line 121 extending in ahorizontal direction and a gate insulating layer 140 on the gate line121 are formed, semiconductor layers 151 and 154 are formed on the gateinsulating layer 140, and a source electrode 173 and a drain electrode175 are formed. At this time, the data line 171 connected to the sourceelectrode 173 may be formed to extend in a vertical direction whilecrossing the gate line 121.

The first interlayer insulating layer 180 a is formed on the dataconductors 171, 173, and 175 including the source electrode 173, thedrain electrode 175, and the data line 171, and the exposed portion ofthe semiconductor layer 154.

The color filter 230 is formed at a position corresponding to the pixelarea on the first interlayer insulating layer 180 a, and the lightblocking members 220 are formed between the color filters 230. The lightblocking member 220 includes a horizontal light blocking member 220 aformed in a direction parallel to the gate line 121, and a verticallight blocking member 220 b formed in a direction parallel to the dataline 171.

The second interlayer insulating layer 180 b covering the color filter230 and the light blocking member 220 is formed on the color filter 230and the light blocking member 220. The second interlayer insulatinglayer 180 b is formed to have the contact hole 185 for electrically andphysically connecting the pixel electrode 191 and the drain electrode175.

Next, the pixel electrode 191 is formed on the second interlayerinsulating layer 180 b, and a sacrificial layer 300 is formed on thepixel electrode 191. As shown in FIG. 10, an opening OPN is formed inthe sacrificial layer 300 on the data line 171. The opening OPN may beformed with a shape elongated along the direction of the data line 171.

In a subsequent process, the common electrode 270, the insulating layer350, and an organic layer 360 are filled in the open portion OPN, andthe organic layer 360 is patterned to form the partition 360 w asdescribed below. The common electrode 270 may be made of a transparentconductive material such as ITO or IZO. The insulating layer 350 may bean inorganic insulating layer formed of an inorganic material such as asilicon nitride (SiNx) or a silicon oxide (SiO_(x)).

Referring to FIG. 1, FIG. 11, and FIG. 12, the common electrode 270, theinsulating layer 350, and the organic layer 360 are sequentially formedon the sacrificial layer 300. The insulating layer 350 may be aninorganic insulating layer formed of an inorganic material such as asilicon nitride (SiNx) or a silicon oxide (SiO_(x)). The organic layer360 may be a photoresist. In the present exemplary embodiment, theorganic layer 360 may be formed with a thickness of less than 2 μm.

The organic layer 360 may be removed in a region corresponding to thehorizontal light blocking member 220 a disposed between the adjacentpixel areas in the vertical direction through exposing and developingprocesses. The organic layer 360 exposes the insulating layer 350 to theoutside in the region corresponding to the horizontal light blockingmember 220 a. At this time, the common electrode 270, the insulatinglayer 350, and the organic layer 360 may fill the opening OPN above thetransverse light blocking member 220 b.

Referring to FIG. 13, the insulating layer 350 and the common electrode270 may be patterned by using the organic layer 360 as a mask. Theinsulating layer 350 and the common electrode 270 may be etched by a dryetching method. By partially removing the insulating layer 350 and thecommon electrode 270, a liquid crystal injection portion 307FP isformed.

Referring to FIG. 1, FIG. 14, and FIG. 15, the sacrificial layer 300 isremoved through the liquid crystal injection portion 307FP by oxygen(O₂) ashing treatment or a wet etching method. At this time, themicrocavity 305 having the entrance region 307 is formed. Themicrocavity 305 is an empty space formed when the sacrificial layer 300is removed.

Referring to FIG. 1, FIG. 16, and FIG. 17, after the sacrificial layer300 is removed, an ashing treatment may be performed. At this time, anoxygen (O₂) ashing treatment may be performed. This may be a process toprevent the liquid crystal display from not being operated byinterference with the liquid crystal alignment when the sacrificiallayer 300 is not previously completely removed and partially remains. Inthe present exemplary embodiment, the organic layer 360 may beselectively removed in the ashing treatment. To selectively remove theorganic layer 360 on the microcavity 305, the organic layer 360 may becoated with the thickness of less than 2 μm in the process of formingthe organic layer 360. However, to control the thickness of the removedorganic layer 360, a time of the ashing treatment may be controlledregardless of the coating thickness.

Referring to FIG. 1, FIG. 18, and FIG. 19, the organic layer 360 on themicrocavity 305 may be selectively removed by the ashing treatment asdescribed above in reference to FIGS. 16, 17. In the present exemplaryembodiment, as shown in FIG. 19, the partition 360 w is formed betweenthe microcavities 305 adjacent in the direction that the gate lines 121are extended. In the present exemplary embodiment, the organic layer 360is selectively removed, and only the organic layer 360 remains at theopening OPN formed in FIG. 10 to form the partition 360 w.

As described above, according to the present exemplary embodiment, sincethe organic layer 360 covers the insulating layer 350 including theinorganic material in the process, the insulating layer 350 may beprevented from being damaged. Also, the organic layer 360 is finallyremoved at the portion of the insulating layer 350 corresponding to themicrocavity 305 such that a structural deformation by a stressdifference may be prevented between the inorganic layer, e.g., theinsulating layer 350, and the organic layer. e.g., the organic layer360.

Referring to FIG. 1, FIG. 20, and FIG. 21, an alignment material isinjected through the liquid crystal injection portion 307FP and theentrance region 307 to form alignment layers 11 and 21 on the pixelelectrode 191 and the common electrode 270. In detail, a bake process isperformed after injecting an alignment material including a solidcontent and a solvent through the entrance region 307.

Next, a liquid crystal material including the liquid crystal molecules310 is injected into the microcavity 305 via the entrance region 307,using an inkjet method and the like.

Thereafter, the capping layer 390 is formed on the insulating layer 350to cover the entrance region 307 and the liquid crystal injectionportion 307FP to form the liquid crystal display illustrated in FIGS. 2and 3.

Next, an exemplary embodiment of a method manufacturing the describedliquid crystal display will be described with reference to FIG. 22 toFIG. 24. An exemplary embodiment to be described below is an exemplaryembodiment of the manufacturing method and may be modified in anotherform.

FIGS. 22, 23, and 24 are cross-sectional views showing a manufacturingmethod of a liquid crystal display according to an embodiment of FIG. 4to FIG. 7.

The same or similar process as described in FIG. 9 to FIG. 19 isperformed to form the roof layer 370 after selectively removing theorganic layer 360 or the same or similar process as described in FIG. 9to FIG. 21 is performed to form the roof layer 370 after injectingliquid crystal materials.

Referring to FIG. 22, FIG. 24, the roof layer 370 is formed on theinsulating layer 350, and the roof layer 370 may be removed in theliquid crystal injection portion 307FP by patterning the roof layer 370.However, in the case of forming the roof layer 370 after injecting theliquid crystal materials, the roof layer 370 may remain in the liquidcrystal injection portion 307FP as shown in FIG. 23.

Thereafter, the capping layer 390 on the roof layer 370 is formed tocover the entrance region 307 and the liquid crystal injection portion307FP to form the liquid crystal display illustrated in FIGS. 5 and 7.In another embodiment, the capping layer 390 on the roof layer 370 isformed to cover the liquid crystal injection portion 307FP to form theliquid crystal display illustrated in FIGS. 6 and 7.

FIG. 25 is a top plan view of a liquid crystal display according to anexemplary embodiment. FIG. 26 is a cross-sectional view of the liquidcrystal display of FIG. 25, taken along the line XXVI-XXVI. FIG. 27 is across-sectional view of the liquid crystal display of FIG. 25, takenalong the line XXVII-XXVII.

FIG. 25 shows a 2*2 pixel, which is a part of a plurality of pixels, andsuch pixels may be iteratively arranged in up, down, left, and rightdirections in the liquid crystal display according to the exemplaryembodiment.

Referring to FIG. 25 to FIG. 27, gate lines 121 and storage electrodelines 131 are formed on a substrate 110 that is made of transparentglass or plastic. The gate lines 121 include a gate electrode 124. Thestorage electrode lines 131 substantially extend in a horizontaldirection, and transmit a constant voltage such as a common voltageVcom. The storage electrode lines 131 include a pair of verticalportions 135 a, sometimes called vertical storage electrode portions 135a, substantially extending perpendicularly to the gate line 121 and apair of horizontal portions 135 b, sometimes called horizontal storageelectrode portions 135 a, connecting ends of the pair of verticalportions 135 a with each other. The storage electrode portions 135 a and135 b may have a structure that surrounds a pixel electrode 191.

A gate insulating layer 140 is formed on the gate lines 121 and thestorage electrode lines 131. A linear semiconductor layer 151 providedin a lower portion of a data line 171 and a semiconductor layer 154provided below source/drain electrodes 173, 175 and a channel area of athin film transistor Q are formed on the gate insulating layer 140. Thelinear semiconductor layer 151 and the semiconductor layer 154 thatcorresponds to the lower portion of the source/drain electrodes 173, 175and the channel area may be connected with each other.

A plurality of ohmic contacts (not shown) may be formed between thelinear semiconductor layer 151 and the data line 171 and between thesemiconductor layer 154 that corresponds to the lower portion of thesource/drain electrodes 173, 175 and the channel area and thesource/drain electrodes 173, 175.

Data conductors 171, 173, and 175 including the source electrode 173,the data line 171 connected with the source electrode 173, and the drainelectrode 175 are formed on each of the semiconductor layers 151 and 154and the gate insulating layer 140.

The gate electrode 124, the source electrode 173, and the drainelectrode 175 form the thin film transistor Q together with thesemiconductor layer 154, and a channel of the thin film transistor Q isformed in an exposed portion of the semiconductor layer 154 between thesource electrode 173 and the drain electrode 175.

A first interlayer insulating layer 180 a is formed on the dataconductors 171, 173, and 175 and the exposed portion of thesemiconductor layer 154. The first interlayer insulating layer 180 a mayinclude an inorganic insulator such as a silicon nitride (SiNx) and asilicon oxide (SiOx), or an organic insulator.

A color filer 230 and light blocking members 220 a and 220 b are formedon the first interlayer insulating layer 180 a.

First, the light blocking members 220 a and 220 b are formed in alattice structure having an opening that corresponds to an image displayarea, and are made of a material which does not transmit light. Thecolor filter 230 is formed in the opening of the light blocking members220 a and 220 b. The light blocking members 220 a and 220 b include ahorizontal light blocking member 220 a formed along a direction that isparallel with the gate line 121 and a vertical light blocking member 220b formed along a direction that is parallel with the date line 171.

The color filter 230 displays one of primary colors such as threeprimary colors of red, green, and blue. The color filter 230 is notlimited to the three primary colors of red, green, and blue, but maydisplay cyan, magenta, yellow, and white-based colors. The color filter230 may be made of a material displaying different colors for each pixeladjacent to each other.

A second interlayer insulating layer 180 b covering the color filter 230and the light blocking members 220 a and 220 b is formed on the colorfilter 230 and the light blocking members 220 a and 220 b. The secondinterlayer insulating layer 180 b may include an inorganic insulatorsuch as a silicon nitride (SiNx) and a silicon oxide (SiOx), or anorganic insulator. Unlike as shown in FIG. 26, when a step is formed dueto a thickness difference between the color filter 230 and the lightblocking members 220 a and 220 b, the second interlayer insulating layer180 b is set to include an organic insulator so as to reduce or removethe step.

Contact holes 185 that extend to and expose the drain electrode 175 maybe formed in the color filter 230, the light blocking members 220 a and220 b, and the interlayer insulating layers 180 a and 180 b.

The pixel electrode 191 is formed on the second interlayer insulatinglayer 180 b. The pixel electrode 191 may be made of a transparentconductive material such as ITO or IZO.

The pixel electrode 191 is formed in the shape of a quadrangle, andincludes cross stem portions including horizontal stem portions 191 aand vertical stem portions 191 b. In addition, the pixel electrode 191is divided into four sub-areas by the horizontal stem portions 191 a andthe vertical stem portions 191 b, and each sub-area includes a pluralityof minute stem portions 191 c. Further, in the present exemplaryembodiment, the pixel electrode 191 may include outer edge stem portions191 d connecting the minute stem portions 191 c from right and leftouter edges. In the present exemplary embodiment, the outer edge sternportions 191 d are disposed in the right and left outer edges of thepixel electrode 191, but they may extend to an upper or lower portion ofthe pixel electrode 191.

The minute stem portions 191 c of the pixel electrode 191 form an angleof about 40 degrees or 45 degrees with the gate line 121 or thehorizontal stem portion 191 a. In addition, the minute stern portions191 c of two neighboring sub-areas may be perpendicular to each other.Further, the width of the minute stem portions 191 c may be graduallyincreased, or gaps between the minute stem portions 191 c may bedifferent from each other.

The pixel electrode 191 includes an extension portion 197 connected froma lower end of the vertical stem portion 191 b and that has a wider areathan the vertical stem portion 191 b. The extension portion 197 of thepixel electrode 191 is physically and electrically connected with thedrain electrode 175 through the contact hole 185, and receives a datavoltage from the drain electrode 175.

The description of the thin film transistors Q and the pixel electrode191 described above is one example, and the structure of the thin filmtransistors and the design of the pixel electrode may be modified toenhance side visibility.

A lower alignment layer 11 is formed on the pixel electrode 191, and thelower alignment layer 11 may be a vertical alignment layer. The loweralignment layer 11 may include at least one of materials generally usedas a liquid crystal alignment layer such as polyamic acid, apolysiloxane, a polyimide, or the like. In addition, the lower alignmentlayer 11 may be a photo-alignment layer.

An upper alignment layer 21 is disposed in a portion that is opposite tothe lower alignment layer 11, and a microcavity 305 is formed betweenthe lower alignment layer 11 and the upper alignment layer 21. A liquidcrystal material including liquid crystal molecules 310 is injected intothe microcavity 305, and the microcavity 305 includes an entrance region307. In the present exemplary embodiment, an alignment material formingthe alignment layers 11 and 21 and a liquid crystal material includingthe liquid crystal molecules 310 may be injected into the microcavity305 using capillary force.

The microcavity 305 may be formed as a plurality of microcavities 305 bybeing vertically divided by a plurality of liquid crystal injectionportion 307FP provided in a portion that overlaps the gate line 121, andthe plurality of microcavities 305 may be formed along a columndirection, i.e., a vertical direction, of the pixel electrode 191. Inaddition, the microcavity 305 may be formed as a plurality ofmicrocavities 305 by being horizontally divided by a partition wallformation portion PWP, sometimes called a partition wall portion PWP,and the plurality of microcavities 305 may be formed along a rowdirection of the pixel electrode 191, that is, a horizontal direction inwhich the gate line 121 is extended. Each of the plurality ofmicrocavities 305 may correspond to each of the pixel areas or two ormore pixel areas, and the pixel areas may correspond to the imagedisplay area.

The liquid crystal injection portion 307FP may extend along a directionin which the gate line 121 extends. The liquid crystal injection portion307FP may vertically partition the microcavity 305, and may be an emptyspace where a common electrode 270 and a roof layer 370 are removed. Theliquid crystal injection portion 307FP may be covered by a capping layer390 after injection of the alignment layers 11 and 21 and the liquidcrystal material that includes the liquid crystal molecules 310.

The liquid crystal injection portion 307FP may be a path for injectionof an alignment material or a liquid crystal material to the microcavity305 through the entrance region 307 by being filled with the alignmentmaterial or the liquid crystal material.

The common electrode 270 and the roof layer 370 are provided on theupper alignment layer 21. The common electrode 270 receives a commonvoltage, and forms an electric field with the pixel electrode 191 towhich the data voltage is applied so as to determine an inclinationdirection of the liquid crystal molecules 310 in the microcavity 305between the common electrode 270 and the pixel electrode 191. The commonelectrode 270 may be made of a transparent conductive material such asITO or IZO. The common electrode 270 forms a capacitor with the pixelelectrode 191 and maintains an applied voltage even after the thin filmtransistor Q is turned off.

The roof layer 370 is an inorganic insulating layer made of an inorganicmaterial such as a silicon nitride (SiNx) or a silicon oxide (SiOx). Asshown in FIG. 26 and FIG. 27, the roof layer 370 according to theexemplary embodiment may include a first inorganic layer 370 a and asecond inorganic layer 370 b provided on the first inorganic layer 370a. The first inorganic layer 370 a and the second inorganic layer 370 bmay have different stresses. For example, the first inorganic layer 370a may have a compressive stress and the second inorganic layer 370 b mayhave a tensile stress. Alternatively, the first inorganic layer 370 amay have a tensile stress and the second inorganic layer 370 b may havea compressive stress. As in the present exemplary embodiment, the rooflayer 370 has inorganic layers respectively having different stresscharacteristics to thereby control stress of the roof layer 370.Therefore, deformation of the roof layer 370 can be minimized.

The roof layer 370 supports a structure of the microcavity 305 for themicrocavity 305 between the pixel electrode 191 and the common electrode270 to maintain its shape. In order to support the structure of themicrocavity 305, in the present exemplary embodiment, the roof layer 370formed of only the inorganic layer(s) may have a thickness of about 4000Å or more, and more preferably, the roof layer 370 may have a thicknessbetween 6000 Å and 12,000 Å.

In the present exemplary embodiment, the roof layer 370 may be formedthroughout the substrate 110, except for a portion that is removed fromthe liquid crystal injection portion 307FP.

Hereinafter, the roof layer 370 according to the exemplary embodimentwill be described in detail with reference to FIG. 28 to FIG. 30.

According to the exemplary embodiment, unlike a conventional art, aprocess can be simplified by forming the roof layer 370 with only theinorganic layer without using an organic layer.

Referring to FIG. 28, the roof layer 370 between the common electrode270 and the capping layer 390 can be formed of a single inorganic layer.When the roof layer 370 is formed of a single inorganic layer, aninorganic layer having a tensile stress may have a thickness of about6000 Å or more and less than 12,000 Å.

Referring to FIG. 29, a first inorganic layer 370 a, a second inorganiclayer 370 b, and a third inorganic layer 370 c are sequentially layeredsuch that the roof layer 370 is formed. In this case, the firstinorganic layer 370 a may have a compressive stress, the secondinorganic layer 370 b may have a tensile stress, and the third inorganiclayer 370 c may have a compressive stress. Alternatively, the firstinorganic layer 370 a may have a tensile stress, the second inorganiclayer 370 b may have a compressive stress, and the third inorganic layer370 c may have a tensile stress. In other words, the first inorganiclayer 370 a and the third inorganic layer 370 c may have the same typeof stress in the present exemplary embodiment.

Although it is exemplarily illustrated that the roof layer 370 has athree-layered structure in the present exemplary embodiment, this is notrestrictive. Inorganic layers each having a different type of stress maybe alternatively layered such that the roof layer 370 may be formed.

FIG. 30 shows the degree of lift of the roof layer around an entranceregion according to a thickness variation according to exemplaryembodiments. In FIG. 30, the thicknesses marked by the arrows indicateportions where the roof layers 370 are lifted at a location that isadjacent to the liquid crystal injection portion 307FP in FIG. 26.

Referring to FIG. 30, in Exemplary Embodiment 1, a single inorganiclayer 370 having a tensile stress is formed with a thickness of 0.8 μm.In Exemplary Embodiment 2, a first inorganic layer 370 a having acompressive stress is formed with a thickness of 0.2 μm, a secondinorganic layer 370 b having a tensile stress is formed with a thicknessof 0.4 μm, and a third inorganic layer 370 c having a compressive stressis formed with a thickness of 0.2 μm. In Exemplary Embodiment 3, a firstinorganic layer 370 a having a compressive stress is formed with athickness of 0.2 μm, a second inorganic layer 370 b having a tensilestress is formed with a thickness of 0.4 μm, and a third inorganic layer370 c having a compressive stress is formed with a thickness of 0.3 μm.In Exemplary Embodiment 4, a first inorganic layer 370 a having acompressive stress is formed with a thickness of 0.2 μm, a secondinorganic layer 370 b having a tensile stress is formed with a thicknessof 0.3 μm, and a third inorganic layer 370 c having a compressive forceis formed with a thickness of 0.4 μm.

In Exemplary Embodiment 1, an inlet is lifted by 0.47 μm. In ExemplaryEmbodiment 2, Exemplary Embodiment 3, and Exemplary Embodiment 4, thedegree of lift of the inlet is reduced to be less than 0.45 μm when theroof layer 370 is formed by alternatingly layering inorganic layersrespectively having different stress. In detail, the inlet is lifted by0.43 μm in Exemplary Embodiment 2, the inlet is lifted by 0.24 μm inExemplary Embodiment 3, and the inlet is lifted by 0.17 μm in ExemplaryEmbodiment 4. That is, inlet lift can be minimized by controlling thethickness and stress of the inorganic layers.

Referring back to FIG. 26, in the present exemplary embodiment, the sideof each of the common electrode 270 and the roof layer 370 are exposedin the liquid crystal injection portion 307FP, and the exposed sides areengaged with each other. In other words, the lateral wall of the commonelectrode 270 and the lateral wall of the roof layer 370 are aligned.

In the present exemplary embodiment, the common electrode 270 is formedin an upper end of the microcavity 305, but the common electrode 270 maybe formed in a lower portion of the microcavity 305 thereby enablingliquid crystal driving according to an in-plane switching mode inanother exemplary embodiment.

Referring still to FIG. 26, the capping layer 390 is disposed on theroof layer 370. The capping layer 390 includes an organic material or aninorganic material. In the present exemplary embodiment, the cappinglayer 390 may contact an upper surface of the roof layer 370 formed ofonly inorganic layers. The capping layer 390 may be provided not only inan upper portion of the roof layer 370 but also in the liquid crystalinjection portion 307FP. In this case, the capping layer 390 may coverthe entrance region 307 of the microcavity 305, exposed by the liquidcrystal injection portion 307FP. In the present exemplary embodiment, itis illustrated that the liquid crystal material is removed in the liquidcrystal injection portion 307FP, but a residue of the liquid crystalmaterial after injection into the microcavity 305 may remain in theliquid crystal injection portion 307FP.

As shown in FIG. 27, in the present exemplary embodiment, the partitionwall formation portion PWP is formed between horizontally neighboringmicrocavities 305. The partition wall formation portion PWP may extendalong the data line 171, and may be covered by the capping layer 390.The partition wall portion PWP may partition or define the microcavities305 along a horizontal direction. In the present exemplary embodiment,the partition wall portion PWP structure is formed between themicrocavities 305, and therefore less stress is generated even throughthe substrate 110 is bent, and the degree of modification of a cell gapmay be significantly reduced.

FIG. 31 and FIG. 32 are cross-sectional views of an exemplary variationof the exemplary embodiment of FIG. 26. FIG. 31 is a cross-sectionalview of FIG. 25, taken along the line XXVI-XXVI, and FIG. 32 is across-sectional view of FIG. 25, taken along the line XXVII-XXVII.

Referring to FIG. 25, FIG. 31, and FIG. 32, the exemplary variation issimilar to the exemplary embodiment of FIG. 26, except that a cappinglayer 390 is not formed throughout a roof layer 370 but the cappinglayer 390 covers a liquid crystal injection portion 307FP. In detail,the capping layer 390 is formed only in a portion corresponding to theliquid crystal injection portion 307FP, and is not formed in a portioncorresponding to a pixel area. In the present exemplary embodiment, thecapping layer 390 may extend along a direction of a gate line 121.

Hereinafter, an exemplary embodiment of a method for manufacturing theabove-stated liquid crystal display will be described with reference toFIG. 33 to FIG. 41. The exemplary embodiment to be described below is anexemplary embodiment of the manufacturing method and may be modified inanother form.

FIG. 33 to FIG. 41 are cross-sectional views of a manufacturing methodof the liquid crystal display according to an exemplary embodiment.

FIG. 33, FIG. 35, FIG. 37, FIG. 38, and FIG. 40 sequentially illustratecross-sectionals views of the liquid crystal display of FIG. 25, takenalong the line XXVI-XXVI. FIG. 34, FIG. 36, FIG. 39, and FIG. 41 arecross-sectional views of the liquid crystal display of FIG. 25, takenalong the line XXVII-XXVII.

Referring to FIG. 25, FIG. 33, and FIG. 34, gate lines 121 extending ina horizontal direction for forming a generally-known switching element,a gate insulating layer 140 formed on the gate line 121, semiconductorlayers 151 and 154 formed on the gate insulating layer 140, and a sourceelectrode 173 and a drain electrode 175 are formed on a substrate 110.In this case, a data line 171 connected with the source electrode 173may extend in a vertical direction while crossing the gate line 121.

A first interlayer insulating layer 180 a is formed on data conductors171, 173, and 175 including the source electrode 173, the drainelectrode 175, and the data line 171, and the exposed semiconductor 154.

A color filter 230 is formed corresponding to a pixel area on the firstinterlayer insulating layer 180 a, and light blocking members 220 a and22 b are formed between color filters 230. The light blocking members220 a and 220 b include a horizontal light blocking members 220 a formedin a direction parallel with the gate line 121 and a vertical lightblocking member 220 b formed in a direction parallel with the data line171.

A second interlayer insulating layer 180 b covering the color filter 230and the light blocking members 220 a and 220 b is formed thereon, andthe second interlayer insulating layer 180 b includes a contact hole 185for physically and electrically connecting the pixel electrode 191 andthe drain electrode 175.

Next, the pixel electrode 191 is formed on the second interlayerinsulating layer 180 b and a sacrificial layer 300 is formed on thepixel electrode 191. As shown in FIG. 34, an open portion OPN is formedon the data line 171 in the sacrificial layer 300. The open portion OPNmay extend along the data line 171.

In a subsequent process, the common electrode 270, and the roof layer370 are filled in the open portion OPN to form the partition wallportion PWP as described below. The common electrode 270 may be made ofa transparent conductive material such as ITO or IZO. The roof layer 370may be an inorganic insulating layer made of an inorganic material suchas a silicon nitride (SiNx) or a silicon oxide (SiOx).

Referring to FIG. 25, FIG. 35, and FIG. 36, the common electrode 270, afirst inorganic layer 370 a, and a second inorganic layer 370 b aresequentially layered on the sacrificial layer 300. The first inorganiclayer 370 a and the second inorganic layer 370 b may be inorganicinsulating layers made of an inorganic material such as a siliconnitride (SiNx) or a silicon oxide (SiOx). In the present exemplaryembodiment, the first inorganic layer 370 a and the second inorganiclayer 370 b may have different stresses. For example, the firstinorganic layer 370 a may have a compressive stress and the secondinorganic layer 370 b may have a tensile stress. Alternatively, thefirst inorganic layer 370 a may have a tensile stress and the secondinorganic layer 370 b may have a compressive stress. Preferably, thefirst inorganic layer 370 a and the second inorganic layer 370 b may beformed of a silicon nitride such as SiNx, and a stress characteristiccan be modified by controlling the amount of injection of hydrogen gaswhen forming the SiNx.

In this case, as shown in FIG. 36, the common electrode 270, the firstinorganic layer 370 a, and the second inorganic layer 370 b may form apartition wall portion PWP at the open portion OPN of sacrificial layers300 that neighbor each other in a horizontal direction.

Referring to FIG. 37, the first inorganic layer 370 a, the secondinorganic layer 370 b, and the common electrode 270 may be patternedusing the same mask. The first inorganic layer 370 a, the secondinorganic layer 370 b, and the common electrode 270 may be dry-etched.The first inorganic layer 370 a, the second inorganic layer 370 b, andthe common electrode 270 are partially removed so that a liquid crystalinjection portion 307FP is formed and thus the sacrificial layer 300 canbe exposed.

Referring to FIG. 25, FIG. 38, and FIG. 39, the sacrificial layer 300 isremoved through an oxygen (O₂) ashing process or a wet-etching processthrough the liquid crystal injection portion 307FP. In this case,microcavities 305 having entrance regions 307 are formed. Themicrocavity 305 is an empty space because the sacrificial layer 300 isremoved.

Referring to FIG. 25, FIG. 40, and FIG. 41, an alignment material isinjected through the liquid crystal injection portion 307FP and theentrance region 307 to form alignment layers 11 and 21 on the pixelelectrode 191 and the common electrode 270. In detail, a hake process isperformed after injecting the aligning material including a solid and asolvent through the entrance region 307.

Next, the liquid crystal material including the liquid crystal molecules310 is injected into the microcavity 305 through the entrance region 307by using an inkjet method and the like.

Thereafter, the capping layer 390 is formed on the roof layer 370 tocover the entrance region 307 and the liquid crystal injection portion307FP to form the liquid crystal display illustrated in FIGS. 26 and 27.

While the inventive concept has been described in connection with whatis presently considered to be practical exemplary embodiments, it is tobe understood that the inventive concept is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

<Description of Symbols> 300 sacrificial layer 305 microcavity 307entrance region 307FP liquid crystal injection portion 350 insulatinglayer 360 organic layer 360w partition 390 capping layer

What is claimed is:
 1. A liquid crystal display comprising: a substrate;a thin film transistor disposed on the substrate; a pixel electrodeconnected to the thin film transistor; a roof layer disposed to face thepixel electrode; a liquid crystal layer formed by a plurality ofmicrocavities between the pixel electrode and the roof layer, whereinthe microcavities include a liquid crystal material; and a plurality ofpartitions between the microcavities adjacent to each other, wherein thepartitions comprise an organic material and are arranged side by side toone another.
 2. The liquid crystal display of claim 1, wherein the rooflayer is disposed on the partitions.
 3. The liquid crystal display ofclaim 2, further comprising an insulating layer disposed under the rooflayer, wherein the partitions are disposed between the insulating layerand the roof layer.
 4. The liquid crystal display of claim 3, whereinthe roof layer and the insulating layer comprise an inorganic material.5. The liquid crystal display of claim 4, wherein the roof layercontacts the insulating layer in a region corresponding to themicrocavities.
 6. The liquid crystal display of claim 5, furthercomprising a capping layer disposed on a liquid crystal injectionportion, wherein the liquid crystal injection portion is formed betweenthe microcavities.
 7. The liquid crystal display of claim 6, furthercomprising a common electrode disposed under the insulating layer andfacing the pixel electrode with respect to the microcavities, wherein alateral wall of the common electrode and a lateral wall of theinsulating layer are aligned at the liquid crystal injection portion. 8.The liquid crystal display of claim 2, further comprising a data lineconnected to the thin film transistor, and the partitions extend in adirection parallel to the data line.
 9. The liquid crystal display ofclaim 8, wherein the partitions are disconnected according to thedirection of the data line.
 10. The liquid crystal display of claim 9,further comprising a gate line disposed on the substrate and crossingthe data line, and the partitions do not cross the gate line.
 11. Theliquid crystal display of claim 1, wherein the partitions have a barshape.
 12. A method of manufacturing a liquid crystal display,comprising: forming a thin film transistor on a substrate; forming apixel electrode connected to the thin film transistor; forming asacrificial layer on the pixel electrode; forming an insulating layer onthe sacrificial layer; forming an organic layer on the insulating layer;patterning the insulating layer by using the organic layer as a mask;removing the sacrificial layer to form a plurality of microcavities;patterning the organic layer; and injecting a liquid crystal material tothe microcavities, wherein the patterning of the organic layer includesremoving the organic layer disposed at a portion corresponding to eachof the microcavities and forming a plurality of partitions between themicrocavities adjacent to each other.
 13. The method of claim 12,wherein the partitions comprise an organic material and are arrangedside by side to one another.
 14. The method of claim 13, wherein theforming of the sacrificial layer includes forming an opening at aportion overlapping a data line connected to the thin film transistor.15. The method of claim 14, wherein the insulating layer is formed inthe opening.
 16. The method of claim 15, wherein the partitions areformed along a direction that the opening extends.
 17. The method ofclaim 12, further comprising forming a roof layer on the insulatinglayer after patterning the organic layer.
 18. The method of claim 17,wherein the partitions are formed between the roof layer and theinsulating layer.
 19. The method of claim 18, wherein the roof layer andthe insulating layer comprise an inorganic material.
 20. The method ofclaim 19, wherein the roof layer contacts the insulating layer in aregion corresponding to the microcavities.
 21. The method of claim 20,further comprising forming a capping layer in a liquid crystal injectionportion, wherein the liquid crystal injection portion is formed betweenthe microcavities.
 22. The method of claim 21, further comprisingforming a common electrode under the insulating layer and facing thepixel electrode with respect to the microcavities, and the commonelectrode and the insulating layer are patterned by using the organiclayer as a mask.